JANTXV2N1613
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- Mfr.Part #
- JANTXV2N1613
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO39
- Stock
- 37,601
- In Stock ：
- 37,601
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Configuration :
- Single
- JEDEC-95 Code :
- TO-5
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Terminal Position :
- BOTTOM
- Terminal Form :
- Wire
- Max Collector Current :
- 500mA
- Series :
- Military, MIL-PRF-19500/181
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 20 Weeks
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 800mW
- Pin Count :
- 3
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2007
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mount :
- Through Hole
- Packaging :
- Bulk
- Datasheets
- JANTXV2N1613
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N1613L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 15mA, 150mA.The emitter base voltage can be kept at 7V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
JANTXV2N1613L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JANTXV2N1613L Applications
There are a lot of Microsemi Corporation
JANTXV2N1613L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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