JANTX2N7370
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- Mfr.Part #
- JANTX2N7370
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO254AA
- Stock
- 26,975
- In Stock ：
- 26,975
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Qualified
- Element Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/624
- Mount :
- Through Hole
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 1mA
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~200°C TJ
- JESD-30 Code :
- S-MSFM-P3
- Number of Terminations :
- 3
- Power - Max :
- 100W
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A 3V
- Terminal Form :
- PIN/PEG
- Current - Collector (Ic) (Max) :
- 12A
- Collector Emitter Saturation Voltage :
- 3V
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Datasheets
- JANTX2N7370
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole
JANTX2N7370 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTX2N7370 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N7370 Applications
There are a lot of Microsemi Corporation
JANTX2N7370 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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