JANTX2N6286
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- Mfr.Part #
- JANTX2N6286
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 20A TO204AA
- Stock
- 16,589
- In Stock ：
- 16,589
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- O-MBFM-P2
- Published :
- 2002
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1mA
- Current - Collector (Ic) (Max) :
- 20A
- Transition Frequency :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Lead, Tin
- Power - Max :
- 175W
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Transistor Type :
- PNP - Darlington
- Operating Temperature :
- -65°C~175°C TJ
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1250 @ 10A 3V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Element Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/505
- Factory Lead Time :
- 20 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 3V
- Pin Count :
- 2
- JESD-609 Code :
- e0
- Package / Case :
- TO-204AA, TO-3
- Packaging :
- Bulk
- Polarity :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- JANTX2N6286
PNP - Darlington -65°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6286 Overview
This device has a DC current gain of 1250 @ 10A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.
JANTX2N6286 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JANTX2N6286 Applications
There are a lot of Microsemi Corporation
JANTX2N6286 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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