JANTX2N6284
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- Mfr.Part #
- JANTX2N6284
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 20A TO204AA
- Stock
- 100
- In Stock ：
- 100
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 20A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1250 @ 10A 3V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Pin Count :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- JESD-609 Code :
- e0
- Transition Frequency :
- 4MHz
- Terminal Form :
- PIN/PEG
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/504
- Collector Emitter Saturation Voltage :
- 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 175W
- Package / Case :
- TO-204AA, TO-3
- Factory Lead Time :
- 20 Weeks
- JESD-30 Code :
- O-MBFM-P2
- Transistor Element Material :
- SILICON
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Datasheets
- JANTX2N6284
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTX2N6284 Overview
In this device, the DC current gain is 1250 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.
JANTX2N6284 Features
the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
JANTX2N6284 Applications
There are a lot of Microsemi Corporation
JANTX2N6284 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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