JANTX2N5682
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- Mfr.Part #
- JANTX2N5682
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A TO39
- Stock
- 382
- In Stock ：
- 382
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/583
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Published :
- 2002
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Transition Frequency :
- 30MHz
- Collector Emitter Breakdown Voltage :
- 120V
- Pbfree Code :
- No
- Factory Lead Time :
- 20 Weeks
- Mount :
- Through Hole
- Packaging :
- Bulk
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 1A
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Qualification Status :
- Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- JANTX2N5682
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N5682 Overview
This device has a DC current gain of 40 @ 250mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 1A volts is possible.
JANTX2N5682 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTX2N5682 Applications
There are a lot of Microsemi Corporation
JANTX2N5682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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