JANTX2N4261UB
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- Mfr.Part #
- JANTX2N4261UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.03A UB
- Stock
- 23,440
- In Stock ：
- 23,440
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/511
- Collector Base Voltage (VCBO) :
- 15V
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Pin Count :
- 3
- Package / Case :
- 3-SMD, No Lead
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Collector Current :
- 30mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-30 Code :
- R-CDSO-N4
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 1V
- Turn On Time-Max (ton) :
- 2.5ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Packaging :
- Bulk
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 4.5V
- Datasheets
- JANTX2N4261UB
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTX2N4261UB Overview
This device has a DC current gain of 30 @ 10mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4.5V to achieve high efficiency.The maximum collector current is 30mA volts.
JANTX2N4261UB Features
the DC current gain for this device is 30 @ 10mA 1V
the vce saturation(Max) is 350mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
JANTX2N4261UB Applications
There are a lot of Microsemi Corporation
JANTX2N4261UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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