JANTX2N3999
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- Mfr.Part #
- JANTX2N3999
- Manufacturer
- Microchip Technology
- Package / Case
- TO-210AA, TO-59-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A TO59
- Stock
- 26,660
- In Stock ：
- 26,660
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- JESD-30 Code :
- O-MUPM-X3
- Number of Terminations :
- 3
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Published :
- 2007
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 8V
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Package / Case :
- TO-210AA, TO-59-4, Stud
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- No
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Max Collector Current :
- 5A
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Stud
- Max Power Dissipation :
- 2W
- Pin Count :
- 4
- Current - Collector (Ic) (Max) :
- 10A
- Terminal Form :
- UNSPECIFIED
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 10μA
- Series :
- Military, MIL-PRF-19500/374
- Factory Lead Time :
- 20 Weeks
- Mounting Type :
- Chassis, Stud Mount
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 2V
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Position :
- UPPER
- Datasheets
- JANTX2N3999
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-210AA, TO-59-4, Stud Bulk Chassis, Stud Mount
JANTX2N3999 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 2V.When VCE saturation is 2V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.
JANTX2N3999 Features
the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V
JANTX2N3999 Applications
There are a lot of Microsemi Corporation
JANTX2N3999 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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