JANTX2N3637UB
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- Mfr.Part #
- JANTX2N3637UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A 3SMD
- Stock
- 37,823
- In Stock ：
- 37,823
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 200ns
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Configuration :
- Single
- Max Collector Current :
- 1A
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/357
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Collector Base Voltage (VCBO) :
- 175V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 1.5W
- Operating Temperature :
- -65°C~200°C TJ
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Terminal Position :
- Dual
- Package / Case :
- 3-SMD, No Lead
- Turn Off Time-Max (toff) :
- 650ns
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 10μA
- Pin Count :
- 3
- Transistor Type :
- PNP
- HTS Code :
- 8541.29.00.95
- Mount :
- Surface Mount
- Power Dissipation :
- 1W
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 23 Weeks
- Collector Emitter Voltage (VCEO) :
- 175V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JANTX2N3637UB
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JANTX2N3637UB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 50mA 10V.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.
JANTX2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JANTX2N3637UB Applications
There are a lot of Microsemi Corporation
JANTX2N3637UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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