JANTX2N2907A
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- Mfr.Part #
- JANTX2N2907A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO206AA
- Stock
- 11,808
- In Stock ：
- 11,808
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.6V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Junction Temperature (Tj) :
- 200°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 50nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 500mW
- Packaging :
- Bulk
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- Max Operating Temperature :
- 200°C
- Supplier Device Package :
- TO-206AA (TO-18)
- Power - Max :
- 500mW
- hFE Min :
- 100
- Mount :
- Through Hole
- Min Operating Temperature :
- -65°C
- Max Collector Current :
- 600mA
- Current - Collector (Ic) (Max) :
- 600mA
- Polarity :
- PNP
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Series :
- Military, MIL-PRF-19500/291
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Published :
- 2007
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Height :
- 5.33mm
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Datasheets
- JANTX2N2907A
PNP -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANTX2N2907A Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-206AA (TO-18).Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.
JANTX2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of TO-206AA (TO-18)
JANTX2N2907A Applications
There are a lot of Microsemi Corporation
JANTX2N2907A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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