JANTX2N2905A
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- Mfr.Part #
- JANTX2N2905A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO39
- Stock
- 87
- In Stock ：
- 87
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e0
- Transistor Type :
- PNP
- Configuration :
- Single
- Mount :
- Through Hole
- Series :
- Military, MIL-PRF-19500/290
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Lead, Tin
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 45ns
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 600mW
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 1μA
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Published :
- 2002
- Factory Lead Time :
- 23 Weeks
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 600mA
- Transition Frequency :
- 200MHz
- Terminal Form :
- Wire
- Datasheets
- JANTX2N2905A
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2905A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 600mA volts.
JANTX2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JANTX2N2905A Applications
There are a lot of Microsemi Corporation
JANTX2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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