JANTX2N2605
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- Mfr.Part #
- JANTX2N2605
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.03A TO46
- Stock
- 190
- In Stock ：
- 190
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/354
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Max Collector Current :
- 30mA
- Pbfree Code :
- No
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10nA
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Number of Pins :
- 3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 70V
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Factory Lead Time :
- 23 Weeks
- Published :
- 2007
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 400mW
- Max Power Dissipation :
- 400mW
- Datasheets
- JANTX2N2605
PNP -65°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
JANTX2N2605 Overview
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 30mA volts.
JANTX2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
JANTX2N2605 Applications
There are a lot of Microsemi Corporation
JANTX2N2605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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