JANTX2N2218A
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- Mfr.Part #
- JANTX2N2218A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 32,494
- In Stock ：
- 32,494
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- Radiation Hardening :
- No
- Transition Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 800mW
- Factory Lead Time :
- 23 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/251
- Max Collector Current :
- 800mA
- JEDEC-95 Code :
- TO-5
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~200°C TJ
- Pin Count :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 50V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 10nA
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Datasheets
- JANTX2N2218A
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTX2N2218A Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
JANTX2N2218A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
JANTX2N2218A Applications
There are a lot of Microsemi Corporation
JANTX2N2218A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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