JANSR2N3439

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

800 mW

Qualification Status :

Qualified

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

350 V

DC Current Gain-Min (hFE) :

40

Collector Current-Max (IC) :

1 A

Package :

Bulk

Package Shape :

RECTANGULAR

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

0.8 W

JESD-30 Code :

R-CDSO-N4

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

ECCN Code :

EAR99

Reference Standard :

MIL-19500; RH - 100K Rad(Si)

Number of Elements :

1

Package / Case :

4-SMD, No Lead

Current - Collector Cutoff (Max) :

2µA

Configuration :

Single

Current - Collector (Ic) (Max) :

2 µA

Technology :

Si

Operating Temperature :

-65°C ~ 200°C (TJ)

Frequency - Transition :

-

Product Status :

Active

Packaging :

Waffle

Product Type :

BJTs - Bipolar Transistors

HTS Code :

8541.21.00.95

Pin Count :

3

Polarity/Channel Type :

NPN

Brand :

Microchip / Microsemi

Terminal Position :

Dual

Number of Terminals :

4

RoHS :

Details

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Series :

Military, MIL-PRF-19500/368

Supplier Device Package :

UA

Reach Compliance Code :

Compliant

Product Category :

Bipolar Transistors - BJT

Voltage - Collector Emitter Breakdown (Max) :

350 V

Case Connection :

COLLECTOR