JANSR2N2369AUBC

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 1V

Package :

Bulk

Transistor Application :

SWITCHING

Product Type :

BJTs - Bipolar Transistors

ECCN Code :

EAR99

Package / Case :

3-SMD, No Lead

Surface Mount :

yes

Power Dissipation Ambient-Max :

0.36 W

VCEsat-Max :

0.2 V

Terminal Form :

NO LEAD

Product Status :

Active

Collector-Base Capacitance-Max :

4 pF

Reach Compliance Code :

Compliant

Current - Collector (Ic) (Max) :

400 nA

Packaging :

Waffle

Power Dissipation-Max (Abs) :

0.36 W

Polarity/Channel Type :

NPN

Number of Elements :

1

Technology :

Si

Base Product Number :

2N2369A

RoHS :

N

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Frequency - Transition :

-

DC Current Gain-Min (hFE) :

20

Product Category :

Bipolar Transistors - BJT

Package Shape :

RECTANGULAR

Power - Max :

360 mW

Configuration :

Single

Collector-Emitter Voltage-Max :

15 V

Transistor Element Material :

SILICON

Brand :

Microchip / Microsemi

Series :

Military, MIL-PRF-19500/317

JESD-30 Code :

R-CDSO-N3

Operating Temperature :

-65°C ~ 200°C (TJ)

Current - Collector Cutoff (Max) :

400nA

Transistor Type :

NPN

Supplier Device Package :

3-SMD

Reference Standard :

MIL-19500; RH - 100K Rad(Si)

Voltage - Collector Emitter Breakdown (Max) :

15 V

Terminal Position :

Dual

Number of Terminals :

3

Mounting Type :

Surface Mount