JANSF2N2221AUB
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- Mfr.Part #
- JANSF2N2221AUB
- Manufacturer
- Microsemi
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 29,294
- In Stock ：
- 29,294
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Tray
- Current - Collector (Ic) (Max) :
- 800mA
- Transistor Type :
- NPN
- Published :
- 2007
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 500mW
- Series :
- Military, MIL-PRF-19500/255
- Current - Collector Cutoff (Max) :
- 50nA
- Supplier Device Package :
- UB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Datasheets
- JANSF2N2221AUB
NPN -65°C~200°C TJ 50nA 3-SMD, No Lead Tray Surface Mount
JANSF2N2221AUB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSF2N2221AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
JANSF2N2221AUB Applications
There are a lot of Microsemi Corporation
JANSF2N2221AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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