JANS2N5666S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Emitter Voltage-Max :

200 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Product Type :

BJTs - Bipolar Transistors

RoHS :

N

Vce Saturation (Max) @ Ib, Ic :

1V @ 1A, 5A

Transistor Application :

SWITCHING

Base Product Number :

2N5666

Factory Lead Time :

34 Weeks

Number of Terminals :

3

Operating Temperature :

-65°C ~ 200°C (TJ)

Transistor Element Material :

SILICON

Terminal Form :

Wire

Configuration :

Single

Mounting Type :

Through Hole

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

200 V

Current - Collector (Ic) (Max) :

5 A

Product Status :

Active

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

40

Power - Max :

1.2 W

Brand :

Microchip / Microsemi

Reference Standard :

MIL-19500/455

Subcategory :

Transistors

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Technology :

Si

Series :

Military, MIL-PRF-19500/455

Qualification Status :

Qualified

Package Shape :

Round

JESD-30 Code :

O-MBCY-W3

Supplier Device Package :

TO-39 (TO-205AD)

Frequency - Transition :

-

Reach Compliance Code :

Compliant

Product Category :

Bipolar Transistors - BJT

Transistor Type :

NPN

Package :

Bulk

Package / Case :

TO-205AD, TO-39-3 Metal Can

Case Connection :

COLLECTOR

Collector Current-Max (IC) :

5 A

Current - Collector Cutoff (Max) :

200nA

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A, 5V