JANS2N3019
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- Mfr.Part #
- JANS2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO5
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/391
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 140V
- Terminal Form :
- Wire
- Published :
- 2007
- JEDEC-95 Code :
- TO-205AD
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 33 Weeks
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Datasheets
- JANS2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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