JANS2N3019
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- Mfr.Part #
- JANS2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO5
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Published :
- 2007
- Max Power Dissipation :
- 800mW
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 800mW
- Factory Lead Time :
- 33 Weeks
- Series :
- Military, MIL-PRF-19500/391
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 1A
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- ECCN Code :
- EAR99
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-205AD
- Terminal Form :
- Wire
- Datasheets
- JANS2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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