JANS2N3019
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- Mfr.Part #
- JANS2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO5
- Stock
- 36
- In Stock ：
- 36
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/391
- Factory Lead Time :
- 33 Weeks
- Number of Elements :
- 1
- Configuration :
- Single
- Max Collector Current :
- 1A
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Terminal Form :
- Wire
- Published :
- 2007
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- ECCN Code :
- EAR99
- Power Dissipation :
- 800mW
- Pin Count :
- 2
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 140V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-205AD
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Datasheets
- JANS2N3019
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3019 Overview
DC current gain in this device equals 50 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
JANS2N3019 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
JANS2N3019 Applications
There are a lot of Microsemi Corporation
JANS2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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