JAN1N5806US

Manufacturer :

Semtech

Product Category :

Diodes - Rectifiers - Single

Reverse Recovery Time :

25 ns

JESD-609 Code :

e0

Peak Non-Repetitive Surge Current :

35A

Number of Phases :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Voltage - Forward (Vf) (Max) @ If :

975mV @ 2.5A

Packaging :

Bulk

Capacitance @ Vr, F :

25pF @ 10V 1MHz

Number of Elements :

1

Min Operating Temperature :

-65°C

RoHS Status :

Non-RoHS Compliant

Reference Standard :

MIL-19500/477F

Max Repetitive Reverse Voltage (Vrrm) :

150V

Qualification Status :

Qualified

Mount :

Surface Mount

Operating Temperature - Junction :

-65°C~175°C

Diode Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Position :

END

Max Reverse Voltage (DC) :

150V

Diode Type :

Standard

Forward Voltage :

975mV

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Terminal Finish :

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

Case Connection :

Isolated

Number of Terminations :

2

Average Rectified Current :

2.5A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Published :

1997

Series :

Military, MIL-PRF-19500/477

HTS Code :

8541.10.00.80

Max Operating Temperature :

175°C

Factory Lead Time :

8 Weeks

Application :

ULTRA FAST RECOVERY POWER

Current - Reverse Leakage @ Vr :

1μA @ 150V

Peak Reverse Current :

1μA

Number of Pins :

2

Terminal Form :

WRAP AROUND

Package / Case :

SQ-MELF, A