J177,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Reach Compliance Code :

Unknown

HTS Code :

8541.21.00.95

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Voltage - Cutoff (VGS off) @ Id :

800mV @ 10nA

Terminal Position :

BOTTOM

Published :

1997

Configuration :

Single

Operating Mode :

Depletion Mode

Voltage - Breakdown (V(BR)GSS) :

30V

Power - Max :

400mW

Operating Temperature :

150°C TJ

Packaging :

Tape and Box (TB)

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Number of Terminations :

3

Power Dissipation-Max (Abs) :

0.4W

Surface Mount :

No

JESD-30 Code :

O-PBCY-T3

Base Part Number :

J177

Transistor Application :

SWITCHING

FET Technology :

JUNCTION

JESD-609 Code :

e3

Resistance - RDS(On) :

300Ohm

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

8pF @ 10V VGS

Transistor Element Material :

SILICON

Current - Drain (Idss) @ Vds (Vgs=0) :

1.5mA @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

300Ohm