J113

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Radiation Hardening :

No

Drain to Source Resistance :

100Ohm

Breakdown Voltage :

-35V

FET Type :

N-Channel

Voltage - Cutoff (VGS off) @ Id :

500mV @ 1μA

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Max Junction Temperature (Tj) :

150°C

Power - Max :

625mW

Width :

4.19mm

Published :

2006

Continuous Drain Current (ID) :

2mA

Max Power Dissipation :

625mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

-35V

Current Rating :

50mA

Max Operating Temperature :

150°C

Weight :

201mg

Voltage - Breakdown (V(BR)GSS) :

35V

Base Part Number :

J113

Length :

5.2mm

Supplier Device Package :

TO-92-3

Power Dissipation :

625mW

REACH SVHC :

No SVHC

Height :

5.33mm

Mounting Type :

Through Hole

Element Configuration :

Single

Resistance - RDS(On) :

100Ohms

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Contact Plating :

Copper, Silver, Tin

Drain to Source Voltage (Vdss) :

35V

Number of Pins :

3

Mount :

Through Hole

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Packaging :

Bulk

Voltage - Rated DC :

35V

Current - Drain (Idss) @ Vds (Vgs=0) :

2mA @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)