ISL89165FRTBZ

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Mfr.Part #
ISL89165FRTBZ
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8TDFN
Stock
2,858
In Stock :
2,858

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Max Operating Temperature :
125°C
Max Output Current :
6A
Number of Terminations :
8
Time@Peak Reflow Temperature-Max (s) :
30
Fall Time (Typ) :
20 ns
Number of Pins :
8
Peak Reflow Temperature (Cel) :
260
Max Supply Voltage :
16V
Terminal Form :
NO LEAD
Current - Output :
6A
Power Dissipation-Max :
33.3W
RoHS Status :
RoHS Compliant
Min Supply Voltage :
4.5V
Terminal Position :
Dual
Width :
3mm
Output Peak Current Limit-Nom :
6A
Interface IC Type :
AND GATE BASED MOSFET DRIVER
Published :
2010
Nominal Supply Current :
5mA
Supply Voltage :
12V
High Side Driver :
yes
Terminal Finish :
Matte Tin (Sn) - annealed
Turn On Delay Time :
25 ns
Turn-Off Delay Time :
25 ns
Rise Time :
20ns
Min Operating Temperature :
-40°C
Turn Off Time :
0.05 μs
Length :
3mm
Mount :
Surface Mount
Number of Drivers :
2
Terminal Pitch :
0.65mm
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Number of Functions :
1
Turn On Time :
0.05 μs
Temperature Grade :
Automotive
Factory Lead Time :
5 Weeks
Datasheets
ISL89165FRTBZ
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, ISL89165FRTBZ pinout, ISL89165FRTBZ datasheet PDF, ISL89165FRTBZ amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL89165FRTBZ


Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ Overview

The ISL89165FRTBZ by Intersil, a part of Renesas Electronics Corporation, represents a cutting-edge solution in low-side gate driving technology. This IC gate driver is housed in an efficient 8TDFN package, designed to deliver high performance with minimal power loss. Its compact form factor and robust design make the ISL89165FRTBZ an ideal choice for advanced electronics applications requiring precise control of power switches. With its high-speed operation and durable construction, the Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ ensures reliability and efficiency in managing power transistors and MOSFETs, making it indispensable in both commercial and industrial settings.

ISL89165FRTBZ Features

The ISL89165FRTBZ gate driver is equipped with numerous features that enhance its performance and suitability for demanding applications. These include high peak output current, integrated under-voltage lockout, fast propagation delays, and a robust output drive capable of handling frequencies up to 1MHz. Furthermore, the device boasts excellent thermal performance and is designed to operate over a wide temperature range, ensuring reliability under varying environmental conditions.

ISL89165FRTBZ Applications

  • Motor Control Systems: The ISL89165FRTBZ can be used to drive low-side MOSFETs in motor control circuits, improving the efficiency and response time of motor operations.
  • Power Supply Units: In power supplies, this gate driver helps in managing the switching operations, significantly enhancing power efficiency and stability.
  • LED Lighting: It is also suitable for driving switches in LED lighting systems, providing reliable performance and extending the lifespan of the lighting components.
  • Automotive Applications: The robustness of the ISL89165FRTBZ makes it a perfect choice for automotive electronics, where durability and consistent performance are crucial.
  • Solar Inverters: This driver is used in solar inverters to efficiently manage the power conversion process, ensuring maximum conversion efficiency and reliability in energy-intensive environments.
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