ISL6614CB

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Mfr.Part #
ISL6614CB
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 14SOIC
Stock
43,386
In Stock :
43,386

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Temperature Grade :
Other
Mount :
Surface Mount
Number of Functions :
2
Terminal Position :
Dual
JESD-609 Code :
e3
Supply Voltage :
12V
Pin Count :
14
Number of Drivers :
4
Width :
3.9mm
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Terminal Form :
Gull wing
Max Output Current :
3A
High Side Driver :
yes
Fall Time (Typ) :
18 ns
Min Supply Voltage :
10.8V
Output Peak Current Limit-Nom :
3A
Max Operating Temperature :
85°C
Published :
2001
Number of Terminations :
14
Current - Output :
3A
Rise Time :
26ns
Terminal Pitch :
1.27mm
Max Supply Voltage :
13.2V
Pbfree Code :
yes
Qualification Status :
Not Qualified
Lead Free :
Lead Free
Min Operating Temperature :
0°C
Number of Pins :
14
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Terminal Finish :
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) :
30
Height Seated (Max) :
1.75mm
Package / Case :
SOIC
Operating Supply Current :
7.1mA
Power Dissipation-Max :
1W
Power Supplies :
12V
Length :
8.65mm
Datasheets
ISL6614CB
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614CB from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:14, Number of Pins:14, Package / Case:SOIC, ISL6614CB pinout, ISL6614CB datasheet PDF, ISL6614CB amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614CB ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6614CB


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614CB Overview

The ISL6614CB from Intersil (Renesas Electronics Corporation) stands out in the market as a robust and highly efficient half-bridge gate driver, designed to meet the demanding requirements of modern power conversion applications. This IC facilitates the management of gate driving with exceptional precision, thanks to its advanced features and built-in protections. Ideal for driving N-Channel MOSFETs and IGBTs, this component ensures reliable performance in a variety of power systems. The Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614CB incorporates innovative circuitry that promotes energy efficiency and operational reliability, making it a top choice for developers looking to enhance system robustness and efficiency.

ISL6614CB Features

  • Dual independent drive channels for flexibility in half-bridge configurations.
  • Integrated bootstrap diode to minimize external component count and system complexity.
  • High peak drive current capability of up to 2A ensures efficient switching of connected MOSFETs or IGBTs.
  • Cross-conduction prevention logic to enhance system safety and reliability.
  • Wide operating voltage range from 10V to 20V, accommodating a variety of power supply specifications.
  • Under-voltage lockout (UVLO) on both high-side and low-side channels to protect against insufficient gate voltage.

ISL6614CB Applications

  • DC/DC Converters: Enhances the efficiency and reliability of DC/DC conversion systems by providing robust gate drive capability.
  • Motor Control Systems: Offers precise control in motor drive applications, ensuring efficient operation and protection against fault conditions.
  • Uninterruptible Power Supplies (UPS): Critical for maintaining the integrity and performance of power backup systems through reliable switching.
  • Solar Inverters: Facilitates the conversion of DC from solar panels to AC, ensuring high performance in renewable energy applications.
  • Electric Vehicle (EV) Chargers: Supports the fast switching requirements necessary for modern EV charging systems, contributing to faster and more efficient charging cycles.
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