ISL6613IBZ-T
- Mfr.Part #
- ISL6613IBZ-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 3,170
- In Stock :
- 3,170
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Package / Case :
- SOIC
- Min Supply Voltage :
- 10.8V
- Number of Drivers :
- 2
- Min Operating Temperature :
- -40°C
- Published :
- 2001
- Supply Voltage1-Nom :
- 12V
- High Side Driver :
- yes
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Lead Free :
- Lead Free
- Pin Count :
- 8
- Height Seated (Max) :
- 1.75mm
- Pbfree Code :
- yes
- Max Output Current :
- 3A
- Rise Time :
- 26ns
- Max Operating Temperature :
- 85°C
- Number of Functions :
- 1
- Length :
- 4.9mm
- Output Peak Current Limit-Nom :
- 3A
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Current - Output :
- 3A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-30 Code :
- R-PDSO-G8
- Terminal Position :
- Dual
- Width :
- 3.9mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Supply Voltage :
- 13.2V
- Fall Time (Typ) :
- 18 ns
- Temperature Grade :
- Industrial
- ECCN Code :
- EAR99
- Datasheets
- ISL6613IBZ-T

Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613IBZ-T Overview
The ISL6613IBZ-T, manufactured by Intersil (Renesas Electronics Corporation), is a high-performance IC gate driver designed to optimize half-bridge circuits with robustness and efficiency. This Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613IBZ-T device ensures reliable switching performance in a compact 8SOIC package, making it ideal for high-density power applications. It provides designers with a solution that combines low propagation delay and high-voltage drive capability, which is essential for high-frequency operations. The integration of bootstrap diode and advanced protection features makes it a smart choice for critical applications where operational reliability is paramount.
ISL6613IBZ-T Features
The ISL6613IBZ-T includes several key features that make it a standout choice for driving power MOSFETS and IGBTs. These include an integrated bootstrap diode that simplifies the circuit layout and reduces external component count, high peak output drive strength of up to 2A on both high-side and low-side drivers, and under-voltage lockout for both channels. Additionally, its robust 3.3V to 15V gate drive capability allows for flexible interfacing with different logic levels, further enhancing its versatility in various applications.
ISL6613IBZ-T Applications
- Power Supply Units: Utilizes its robust gate drive to ensure stable operation in switch-mode power supplies.
- Motor Control: Its high current capabilities and fast switching speeds make it ideal for controlling various types of motors.
- Solar Inverters: Provides reliable and efficient gate driving in photovoltaic (PV) inverter applications, ensuring maximum power point tracking (MPPT) efficiency.
- Electric Vehicles: Used in the drive systems of electric vehicles to manage power flow between batteries and motors efficiently.
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