ISL6612ECBZ-T

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Mfr.Part #
ISL6612ECBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
2,706
In Stock :
2,706

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Terminal Form :
Gull wing
Published :
2001
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
SOIC
Supply Voltage1-Nom :
12V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Pin Count :
10, 8
Factory Lead Time :
7 Weeks
Time@Peak Reflow Temperature-Max (s) :
30
Temperature Grade :
COMMERCIAL EXTENDED
Rise Time :
26ns
Min Operating Temperature :
0°C
RoHS Status :
RoHS Compliant
Max Supply Voltage :
13.2V
Fall Time (Typ) :
18 ns
Number of Functions :
1
Max Operating Temperature :
85°C
Qualification Status :
Not Qualified
Width :
3.9mm
Mount :
Surface Mount
Terminal Position :
Dual
High Side Driver :
yes
Output Peak Current Limit-Nom :
3A
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Length :
4.89mm
Height Seated (Max) :
1.68mm
Max Output Current :
3A
Number of Drivers :
2
Number of Terminations :
8
Lead Free :
Lead Free
JESD-609 Code :
e3
Current - Output :
3A
Min Supply Voltage :
10.8V
Terminal Finish :
Matte Tin (Sn) - annealed
JESD-30 Code :
R-PDSO-G8
Datasheets
ISL6612ECBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612ECBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOIC, Number of Terminations:8, ISL6612ECBZ-T pinout, ISL6612ECBZ-T datasheet PDF, ISL6612ECBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612ECBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6612ECBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612ECBZ-T Overview

The ISL6612ECBZ-T, a high-performance half-bridge gate driver from Intersil (Renesas Electronics Corporation), is specifically designed to address the stringent demands of modern power conversion applications. This device provides robust drive capability, improving the efficiency and reliability of systems. Utilizing advanced technology, the ISL6612ECBZ-T ensures optimal driving of MOSFETs and IGBTs, minimizing switching losses and enabling compact and energy-efficient designs. Its high peak drive current and tight propagation delay characteristics make the Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612ECBZ-T an ideal choice for high-frequency operations, catering to both commercial and industrial needs.

ISL6612ECBZ-T Features

The ISL6612ECBZ-T gate driver boasts several key features that enhance its performance in a variety of applications. These include high peak output drive current, which ensures effective gate switching even at high frequencies. The device also offers under-voltage lockout protection, which preserves the longevity and reliability of the gate driver under fluctuating power conditions. Additionally, its built-in shoot-through protection prevents potential damage caused by simultaneous high-side and low-side conduction, enhancing the operational safety of the applications.

ISL6612ECBZ-T Applications

  • DC/DC Converters: The ISL6612ECBZ-T is crucial in driving the gates of MOSFETs in DC/DC converter applications, facilitating efficient power conversion and minimizing energy loss.
  • Motor Drives: In motor drive applications, this gate driver optimizes the switching of MOSFETs or IGBTs, enabling precise control over motor speed and torque with reduced electromagnetic interference.
  • Solar Inverters: It plays a vital role in solar inverters, where its high efficiency and robust performance ensure reliable conversion of DC solar output into AC power, suitable for grid use or local consumption.
  • Uninterruptible Power Supplies (UPS): The ISL6612ECBZ-T helps manage power switching in UPS systems, ensuring continuous power delivery and protection against power surges and interruptions.
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