ISL6612BECB-T
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- Mfr.Part #
- ISL6612BECB-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 37,770
- In Stock ：
- 37,770
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Operating Temperature (Max) :
- 85°C
- Output Peak Current Limit-Nom :
- 3A
- Supply Voltage1-Nom :
- 12V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Supply Voltage :
- 12V
- Channel Type :
- SYNCHRONOUS
- Supply Voltage-Min (Vsup) :
- 7V
- Series :
- --
- Terminal Form :
- Gull wing
- Supplier Device Package :
- 8-SOIC-EP
- Temperature Grade :
- Other
- Current - Peak Output (Source, Sink) :
- 1.25A, 2A
- Rise / Fall Time (Typ) :
- 26ns, 18ns
- Surface Mount :
- yes
- Number of Drivers :
- 2
- Driven Configuration :
- Half-Bridge
- JESD-30 Code :
- R-PDSO-G8
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Input Type :
- Non-Inverting
- Base Part Number :
- ISL6612B
- Supply Voltage1-Max :
- 13.2V
- Gate Type :
- N-Channel MOSFET
- Logic Voltage - VIL, VIH :
- --
- Height Seated (Max) :
- 1.68mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 4.89mm
- Terminal Pitch :
- 1.27mm
- Voltage - Supply :
- 7 V ~ 13.2 V
- High Side Driver :
- yes
- Power Supplies :
- 5/1212V
- Supply Voltage1-Min :
- 5V
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Qualification Status :
- Not Qualified
- HTS Code :
- 8542.39.00.01
- Width :
- 3.9mm
- JESD-609 Code :
- e0
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 240
- Number of Terminals :
- 8
- Supply Voltage-Max (Vsup) :
- 13.2V
- High Side Voltage - Max (Bootstrap) :
- 36V
- RoHS Status :
- Non-RoHS Compliant
- Number of Functions :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- ISL6612BECB-T
Gate Drivers+Intersil (Renesas Electronics Corporation)+ISL6612BECB-T Overview
Introducing the ISL6612BECB-T by Intersil (Renesas Electronics Corporation), a high-performance Gate Driver designed for sophisticated half-bridge power applications. This component ensures efficient driving of MOSFETs and IGBTs, facilitating reduced switching losses and enhanced power efficiency. The ISL6612BECB-T integrates advanced features that cater to demanding applications, offering a robust solution for designers focusing on reliability and high efficiency. Its compact 8SOIC package is ideal for streamlined PCB layouts, making it a preferred choice for space-constrained applications. This product stands out in the market for its exceptional quality and performance, solidifying its position as a crucial component in advanced electronic systems.
ISL6612BECB-T Features
The ISL6612BECB-T features include robust adaptive dead-time and under-voltage lockout protection, which safeguard the device and the system under extreme conditions. The driver's high peak output current capability ensures strong drive performance, while its built-in bootstrap diode reduces external component count, enhancing overall system reliability and reducing cost.
ISL6612BECB-T Applications
- DC-DC Converters: Utilizes the ISL6612BECB-T for driving high and low side MOSFETs, improving efficiency and performance in DC-DC conversion applications.
- Motor Control Systems: Employs the ISL6612BECB-T to drive the gates of IGBTs in motor controllers, providing robust operation with enhanced switching speeds.
- Renewable Energy Systems: Integrates the ISL6612BECB-T in solar inverters and wind turbine converters to maximize power efficiency and reliability under variable environmental conditions.
- Power Supplies: Uses the ISL6612BECB-T in the design of modular power supplies for servers and telecom infrastructure, where stable and efficient power delivery is critical.
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