ISL6609IBZ-T

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Mfr.Part #
ISL6609IBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
29,725
In Stock :
29,725

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Supply Voltage :
5V
Max Output Current :
4A
Fall Time (Typ) :
8 ns
Output Peak Current Limit-Nom :
4A
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Terminal Form :
Gull wing
Package / Case :
SOIC
Interface IC Type :
AND GATE BASED MOSFET DRIVER
Terminal Finish :
Matte Tin (Sn) - annealed
Power Dissipation-Max :
800mW
Terminal Position :
Dual
JESD-609 Code :
e3
Max Operating Temperature :
85°C
High Side Driver :
yes
Min Operating Temperature :
-40°C
Factory Lead Time :
6 Weeks
Qualification Status :
Not Qualified
Number of Functions :
1
Number of Drivers :
2
Rise Time :
8ns
Max Supply Voltage :
5.5V
Number of Terminations :
8
Time@Peak Reflow Temperature-Max (s) :
30
Operating Supply Current :
132μA
Width :
3.9mm
Mount :
Surface Mount
Number of Pins :
8
Length :
4.9mm
Temperature Grade :
Industrial
Min Supply Voltage :
4.5V
Current - Output :
4A
Power Supplies :
5V
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Published :
2001
Height Seated (Max) :
1.75mm
Datasheets
ISL6609IBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6609IBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOIC, Number of Terminations:8, Number of Pins:8, ISL6609IBZ-T pinout, ISL6609IBZ-T datasheet PDF, ISL6609IBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6609IBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6609IBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6609IBZ-T Overview

The ISL6609IBZ-T by Intersil (Renesas Electronics Corporation) is a cutting-edge half-bridge gate driver specifically designed to optimize the performance and efficiency of your power management systems. This IC is adept at driving both high-side and low-side N-channel MOSFETs, making it a pivotal component in sophisticated electronic systems. The reliability and versatility provided by the ISL6609IBZ-T ensure it meets the rigorous demands of modern electronics, facilitating reduced switching losses while enhancing overall system robustness. This product is particularly tailored for designers looking to implement robust gate driving mechanisms in compact form factors.

ISL6609IBZ-T Features

The ISL6609IBZ-T gate driver includes several key features that distinguish it in the market: high peak drive strength for effective MOSFET switching, integrated bootstrap diode to simplify PCB layout, and under-voltage lockout protection for enhanced operational reliability. Additionally, its wide operating voltage range and ability to operate up to 1MHz frequency provide great flexibility for designing high-efficiency power conversion applications.

ISL6609IBZ-T Applications

  • DC-DC Converters: Utilizes its robust drive capabilities and fast switching performance to enhance efficiency in voltage conversion systems.
  • Solar Inverters: Plays a crucial role in managing power transference from solar panels to the grid, ensuring maximum efficiency and reliability in energy conversion.
  • Electric Vehicles: Used in the drive systems of electric vehicles to control power distribution between batteries and motors, optimizing performance and energy usage.
  • Uninterruptible Power Supplies (UPS): Ensures reliable gate driving in critical backup power systems, providing stability and efficiency during power outages.
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Shipping Cost

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