ISL6609IBZ-T
- Mfr.Part #
- ISL6609IBZ-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 29,725
- In Stock :
- 29,725
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Supply Voltage :
- 5V
- Max Output Current :
- 4A
- Fall Time (Typ) :
- 8 ns
- Output Peak Current Limit-Nom :
- 4A
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Form :
- Gull wing
- Package / Case :
- SOIC
- Interface IC Type :
- AND GATE BASED MOSFET DRIVER
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation-Max :
- 800mW
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Max Operating Temperature :
- 85°C
- High Side Driver :
- yes
- Min Operating Temperature :
- -40°C
- Factory Lead Time :
- 6 Weeks
- Qualification Status :
- Not Qualified
- Number of Functions :
- 1
- Number of Drivers :
- 2
- Rise Time :
- 8ns
- Max Supply Voltage :
- 5.5V
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Supply Current :
- 132μA
- Width :
- 3.9mm
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Length :
- 4.9mm
- Temperature Grade :
- Industrial
- Min Supply Voltage :
- 4.5V
- Current - Output :
- 4A
- Power Supplies :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Published :
- 2001
- Height Seated (Max) :
- 1.75mm
- Datasheets
- ISL6609IBZ-T

Gate Drivers Intersil (Renesas Electronics Corporation) ISL6609IBZ-T Overview
The ISL6609IBZ-T by Intersil (Renesas Electronics Corporation) is a cutting-edge half-bridge gate driver specifically designed to optimize the performance and efficiency of your power management systems. This IC is adept at driving both high-side and low-side N-channel MOSFETs, making it a pivotal component in sophisticated electronic systems. The reliability and versatility provided by the ISL6609IBZ-T ensure it meets the rigorous demands of modern electronics, facilitating reduced switching losses while enhancing overall system robustness. This product is particularly tailored for designers looking to implement robust gate driving mechanisms in compact form factors.
ISL6609IBZ-T Features
The ISL6609IBZ-T gate driver includes several key features that distinguish it in the market: high peak drive strength for effective MOSFET switching, integrated bootstrap diode to simplify PCB layout, and under-voltage lockout protection for enhanced operational reliability. Additionally, its wide operating voltage range and ability to operate up to 1MHz frequency provide great flexibility for designing high-efficiency power conversion applications.
ISL6609IBZ-T Applications
- DC-DC Converters: Utilizes its robust drive capabilities and fast switching performance to enhance efficiency in voltage conversion systems.
- Solar Inverters: Plays a crucial role in managing power transference from solar panels to the grid, ensuring maximum efficiency and reliability in energy conversion.
- Electric Vehicles: Used in the drive systems of electric vehicles to control power distribution between batteries and motors, optimizing performance and energy usage.
- Uninterruptible Power Supplies (UPS): Ensures reliable gate driving in critical backup power systems, providing stability and efficiency during power outages.
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