ISL6594DCBZ-T

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Gate Drivers

Power Dissipation-Max :

800mW

Voltage - Supply :

6.8 V ~ 13.2 V

Published :

2005

Rise Time :

26ns

Terminal Form :

Gull wing

Max Operating Temperature :

85°C

Driven Configuration :

Half-Bridge

High Side Voltage - Max (Bootstrap) :

36V

Peak Reflow Temperature (Cel) :

260

Rise / Fall Time (Typ) :

26ns, 18ns

Fall Time (Typ) :

18 ns

Width :

3.9mm

Terminal Position :

Dual

Max Supply Voltage :

13.2V

Mounting Type :

Surface Mount

Number of Drivers :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

0°C

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

0°C ~ 125°C (TJ)

Temperature Grade :

Other

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Current - Output :

3A

Supply Voltage :

12V

Radiation Hardening :

No

Logic Voltage - VIL, VIH :

--

Interface IC Type :

HALF BRIDGE BASED MOSFET DRIVER

Operating Supply Current :

5mA

Gate Type :

N-Channel MOSFET

Supplier Device Package :

8-SOIC

Base Part Number :

ISL6594

Input Type :

Non-Inverting

Number of Terminations :

8

ECCN Code :

EAR99

Mount :

Surface Mount

Series :

--

Packaging :

Tape and Reel

Height Seated (Max) :

1.75mm

Time@Peak Reflow Temperature-Max (s) :

40

Output Peak Current Limit-Nom :

3A

Number of Functions :

1

JESD-609 Code :

e3

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Min Supply Voltage :

6.8V

Package / Case :

SOIC

Channel Type :

SYNCHRONOUS

Current - Peak Output (Source, Sink) :

1.25A, 2A

High Side Driver :

yes

Length :

4.9mm