IS43DR82560B-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Terminations :

60

Address Bus Width :

15b

Pin Count :

60

Write Cycle Time - Word, Page :

15ns

Max Frequency :

333MHz

Supply Voltage-Min (Vsup) :

1.7V

Number of Pins :

60

Access Time :

450ps

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

DRAM

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Voltage - Supply :

1.7V~1.9V

Interleaved Burst Length :

48

Operating Mode :

SYNCHRONOUS

Surface Mount :

yes

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Max (Vsup) :

1.9V

Operating Supply Voltage :

1.8V

Memory Width :

8

Output Characteristics :

3-STATE

Density :

2 GB

Supply Voltage :

1.8V

ECCN Code :

EAR99

Packaging :

Tray

Length :

13mm

I/O Type :

COMMON

Refresh Cycles :

8192

HTS Code :

8542.32.00.36

Qualification Status :

Not Qualified

Terminal Pitch :

0.8mm

RoHS Status :

ROHS3 Compliant

Number of Ports :

1

Organization :

256MX8

Supply Current-Max :

0.417mA

Sequential Burst Length :

48

Memory Type :

Volatile

Memory Size :

2Gb 256M x 8

Package / Case :

60-TFBGA

Height Seated (Max) :

1.2mm

Number of Functions :

1

Operating Temperature :

0°C~85°C TC

Standby Current-Max :

0.03A