IS43DR16640A-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Current-Max :

0.015A

Pin Count :

84

Radiation Hardening :

No

Supply Voltage :

1.8V

Memory Size :

1Gb 64M x 16

Data Bus Width :

16b

Supply Voltage-Max (Vsup) :

1.9V

Sequential Burst Length :

48

HTS Code :

8542.32.00.32

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Operating Supply Voltage :

1.8V

JESD-609 Code :

e1

Voltage - Supply :

1.7V~1.9V

Package / Case :

84-TFBGA

Memory Format :

DRAM

Write Cycle Time - Word, Page :

15ns

Terminal Pitch :

0.8mm

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Page Size :

1GB

Pbfree Code :

yes

Clock Frequency :

333MHz

Number of Functions :

1

Organization :

64MX16

Operating Temperature :

0°C~70°C TA

Time@Peak Reflow Temperature-Max (s) :

40

Interleaved Burst Length :

48

Access Time :

450ps

Refresh Cycles :

8192

Memory Type :

Volatile

Height Seated (Max) :

1.2mm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

84

Mount :

Surface Mount

Density :

1 Gb

Packaging :

Tray

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Length :

13.65mm

Address Bus Width :

16b

Memory Width :

16

Supply Voltage-Min (Vsup) :

1.7V

Number of Terminations :

84

Terminal Position :

BOTTOM

Nominal Supply Current :

260mA

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

I/O Type :

COMMON