IS43DR16640A-3DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Qualification Status :

Not Qualified

Pin Count :

84

Voltage - Supply :

1.7V~1.9V

Write Cycle Time - Word, Page :

15ns

Memory Format :

DRAM

Supply Voltage :

1.8V

Package / Case :

84-TFBGA

Power Supplies :

1.8V

Refresh Cycles :

8192

Standby Current-Max :

0.015A

Width :

8mm

Organization :

64MX16

Access Time :

450ps

Sequential Burst Length :

48

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PBGA-B84

Terminal Finish :

Tin/Lead (Sn/Pb)

Memory Size :

1Gb 64M x 16

Packaging :

Tray

Memory Width :

16

JESD-609 Code :

e0

Memory Density :

1073741824 bit

Number of Terminations :

84

Terminal Pitch :

0.8mm

I/O Type :

COMMON

HTS Code :

8542.32.00.32

Number of Ports :

1

Number of Functions :

1

Surface Mount :

yes

Operating Temperature :

-40°C~85°C TA

Terminal Position :

BOTTOM

Output Characteristics :

3-STATE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Length :

13.65mm

Supply Voltage-Min (Vsup) :

1.7V

Supply Current-Max :

0.35mA

Additional Feature :

AUTO/SELF REFRESH

Height Seated (Max) :

1.2mm

Interleaved Burst Length :

48

ECCN Code :

EAR99

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

SYNCHRONOUS

Pbfree Code :

No

Clock Frequency :

333MHz

Reach Compliance Code :

not_compliant

Supply Voltage-Max (Vsup) :

1.9V

Mounting Type :

Surface Mount

Memory Type :

Volatile