IS43DR16320D-3DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

DRAM

Supply Voltage-Max (Vsup) :

1.9V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Width :

16

Interleaved Burst Length :

48

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Memory Size :

512Mb 32M x 16

Number of Ports :

1

Voltage - Supply :

1.7V~1.9V

ECCN Code :

EAR99

Write Cycle Time - Word, Page :

15ns

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Organization :

32MX16

Standby Current-Max :

0.025A

Address Bus Width :

13b

Number of Functions :

1

Number of Terminations :

84

Supply Current-Max :

0.23mA

Height Seated (Max) :

1.2mm

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Operating Mode :

SYNCHRONOUS

Sequential Burst Length :

48

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

1.7V

HTS Code :

8542.32.00.28

Operating Temperature :

-40°C~85°C TA

Packaging :

Tray

Operating Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Memory Interface :

Parallel

Additional Feature :

PROGRAMMABLE CAS LATENCY

Package / Case :

84-TFBGA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

1.8V

Length :

12.5mm

Access Time :

450ps

Refresh Cycles :

8192

JESD-609 Code :

e0

Density :

512 Mb

Output Characteristics :

3-STATE

Clock Frequency :

333MHz

I/O Type :

COMMON

JESD-30 Code :

R-PBGA-B84