IS25WP080D-JNLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Finish :

Tin (Sn)

Supply Voltage-Min (Vsup) :

1.65V

Memory Density :

8388608 bit

Operating Temperature :

-40°C~105°C TA

Factory Lead Time :

8 Weeks

Memory Interface :

SPI - Quad I/O, QPI, DTR

Supply Voltage :

1.8V

Surface Mount :

yes

Number of Terminations :

8

Organization :

1MX8

Voltage - Supply :

1.65V~1.95V

Clock Frequency :

133MHz

Height Seated (Max) :

1.75mm

Programming Voltage :

1.8V

Operating Mode :

SYNCHRONOUS

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

1.95V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9mm

Memory Size :

8Mb 1M x 8

Terminal Position :

Dual

Write Cycle Time - Word, Page :

800µs

Memory Format :

Flash

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Terminal Pitch :

1.27mm

Memory Width :

8

JESD-609 Code :

e3

Alternate Memory Width :

1

Memory Type :

Non-Volatile

Number of Functions :

1

Length :

4.9mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Parallel/Serial :

Serial