IR25606SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Gate Type :

IGBT, N-Channel MOSFET

Rise Time :

220ns

Nominal Supply Current :

200mA

Channel Type :

Independent

Turn-Off Delay Time :

280 ns

Power Dissipation :

625mW

Driven Configuration :

Half-Bridge

Height :

1.5mm

Rise / Fall Time (Typ) :

150ns 50ns

Logic Voltage - VIL, VIH :

0.8V 2.9V

Number of Outputs :

2

Input Type :

Non-Inverting

Terminal Form :

Gull wing

Number of Terminations :

8

Length :

5mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Mount :

Surface Mount

Max Output Current :

350mA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Propagation Delay :

300 ns

Terminal Position :

Dual

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Output Current :

200mA

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Radiation Hardening :

No

Supply Voltage :

15V

Max Power Dissipation :

625mW

Turn On Delay Time :

46 ns

Lead Free :

Lead Free

Width :

4mm

Voltage - Supply :

10V~20V

Published :

1996

Base Part Number :

IR25606SPBF

Output Voltage :

20V

REACH SVHC :

No SVHC

Fall Time (Typ) :

80 ns

Power Supplies :

15V

Factory Lead Time :

13 Weeks

Packaging :

Tube

Current - Peak Output (Source, Sink) :

200mA 350mA

High Side Voltage - Max (Bootstrap) :

600V