IR11662STRPBF
- Mfr.Part #
- IR11662STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE 8SOIC
- Stock
- 6,688
- In Stock :
- 6,688
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Current - Peak Output (Source, Sink) :
- 1A 4A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Number of Drivers :
- 1
- Driven Configuration :
- Low-Side
- Rise Time :
- 21ns
- Supply Voltage :
- 15V
- Output Power :
- 970mW
- Factory Lead Time :
- 12 Weeks
- Output Peak Current Limit-Nom :
- 4A
- Turn-Off Delay Time :
- 75 ns
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 10 ns
- Channel Type :
- Single
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- REACH SVHC :
- No SVHC
- Output Current :
- 1A
- Published :
- 2014
- Operating Supply Current :
- 50mA
- Mounting Type :
- Surface Mount
- Base Part Number :
- IR11662SPBF
- Height :
- 1.4986mm
- Max Output Current :
- 1A
- Weight :
- 540.001716mg
- Terminal Form :
- Gull wing
- Turn Off Time :
- 0.075 μs
- Width :
- 3.9878mm
- Turn On Time :
- 0.095 μs
- Gate Type :
- N-Channel MOSFET
- Length :
- 4.9784mm
- Logic Voltage - VIL, VIH :
- 2V 2.15V
- Rise / Fall Time (Typ) :
- 21ns 10ns
- Operating Temperature :
- -25°C~125°C TJ
- Series :
- Advanced Smart Rectifier™
- Input Type :
- Non-Inverting
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Isolation :
- Isolated
- Turn On Delay Time :
- 95 ns
- Switching Frequency :
- 500kHz
- Output Voltage :
- 200V
- JESD-609 Code :
- e3
- Number of Functions :
- 1
- High Side Driver :
- yes
- Lead Free :
- Lead Free
- Topology :
- Flyback
- Terminal Position :
- Dual
- Voltage - Supply :
- 11.4V~18V
- Resistance :
- 5Ohm
- Datasheets
- IR11662STRPBF

Gate Drivers Infineon Technologies IR11662STRPBF Overview
The Infineon Technologies IR11662STRPBF is a high-performance, low-side gate driver specifically designed to enhance the efficiency and reliability of applications that require precise control over switching characteristics. This device is tailored for managing power MOSFETs and IGBTs with exceptional accuracy. The IR11662STRPBF integrates advanced features such as a high peak output drive current and a wide operating voltage range, making it an ideal choice for sophisticated electronic setups. The robust design ensures reliability in harsh environments, making it a vital component in industrial and automotive applications. Its compact 8SOIC package allows for minimal space usage without compromising performance, securing its place as a top choice for bulk purchasers seeking efficient and reliable gate driving solutions in high-volume scenarios.
IR11662STRPBF Features
The IR11662STRPBF gate driver from Infineon Technologies stands out with its robust feature set, including an impressive peak drive current which ensures strong gate switching capabilities. It also supports a wide operating voltage range, providing flexibility across various applications. Furthermore, the built-in UVLO (Under-Voltage Lock-Out) feature enhances system safety by ensuring the device operates only in optimal electrical conditions, preventing damage and improving system longevity.
IR11662STRPBF Applications
- Motor Control Systems: Utilized in controlling the gates of MOSFETs or IGBTs in electric motors, the IR11662STRPBF provides efficient switching that is crucial for motor performance and longevity.
- Power Supplies: In power supply modules, this gate driver ensures stable and reliable switching, contributing to the overall efficiency and effectiveness of power conversion systems.
- LED Lighting: The IR11662STRPBF can be used in LED lighting systems to control dimming functions through precise gate driving, resulting in enhanced energy efficiency and extended life of lighting components.
- Automotive Applications: Ideal for automotive electronics where reliable and robust control of power transistors is necessary, helping to increase safety and efficiency in automotive electrical systems.
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