IDB30E120ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Diodes - Rectifiers - Single

Number of Phases :

1

Lead Free :

Contains Lead

Radiation Hardening :

No

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Reverse Voltage (DC) :

1.2kV

Voltage - DC Reverse (Vr) (Max) :

1200V

Published :

2005

Max Operating Temperature :

150°C

JESD-30 Code :

R-PSSO-G2

Reverse Recovery Time :

243 ns

ECCN Code :

EAR99

Peak Non-Repetitive Surge Current :

102A

HTS Code :

8541.10.00.80

Average Rectified Current :

50A

Number of Pins :

3

Max Repetitive Reverse Voltage (Vrrm) :

1.2kV

Current - Average Rectified (Io) :

50A DC

Packaging :

Tape and Reel (TR)

Diode Type :

Standard

Diode Element Material :

SILICON

Forward Current :

50A

Peak Reverse Current :

100μA

Operating Temperature - Junction :

-55°C~150°C

RoHS Status :

ROHS3 Compliant

Voltage - Forward (Vf) (Max) @ If :

2.15V @ 30A

Mount :

Surface Mount

Number of Terminations :

2

Number of Elements :

1

Element Configuration :

Single

Forward Voltage :

2.15V

Pbfree Code :

No

Pin Count :

4

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr :

100µA @ 1200V

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin (Sn)