HYB25D512800CE-5

Manufacturer :

Qimonda

Product Category :

Memory

Published :

2007

Clock Frequency :

200MHz

Number of Pins :

66

Lead Free :

Lead Free

Number of Ports :

1

Operating Temperature :

0°C~70°C TA

Supply Voltage-Max (Vsup) :

2.7V

Refresh Cycles :

8192

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Pitch :

0.65mm

Interleaved Burst Length :

248

Width :

10.16mm

Sequential Burst Length :

248

Surface Mount :

yes

Length :

22.22mm

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Voltage - Supply :

2.3V~2.7V

Qualification Status :

Not Qualified

Output Characteristics :

3-STATE

Power Supplies :

2.6V

Number of Functions :

1

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Standby Current-Max :

0.0046A

Peak Reflow Temperature (Cel) :

260

Supply Voltage :

2.5V

Memory Density :

536870912 bit

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Memory Format :

DRAM

Operating Mode :

SYNCHRONOUS

Pin Count :

66

JESD-609 Code :

e3

Supply Current-Max :

0.23mA

Memory Interface :

Parallel

HTS Code :

8542.32.00.28

Access Time :

200 µs

Supply Voltage-Min (Vsup) :

2.3V

Organization :

64MX8

ECCN Code :

EAR99

Memory Width :

8

Memory Size :

512Mb 64M x 8

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

66