HMC8411LP2FETR

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Mfr.Part #
HMC8411LP2FETR
Manufacturer
Analog Devices, Inc.
Package / Case
6-VDFN Exposed Pad, CSP
Datasheet
Download
Description
DC - 8 GHZ 15 DB GAIN
Stock
9,448
In Stock :
9,448

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Manufacturer :
Analog Devices, Inc.
Product Category :
RF Amplifiers
Characteristic Impedance :
50Ohm
Lifecycle Status :
Production (Last Updated: 1 month ago)
Construction :
COMPONENT
Input Power-Max (CW) :
20dBm
Current - Supply :
55mA
Noise Figure :
2dB
Operating Temperature (Min) :
-40°C
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Supply :
2V~6V
RF/Microwave Device Type :
WIDE BAND LOW POWER
Mounting Type :
Surface Mount
Test Frequency :
6GHz~10GHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
10MHz~10GHz
Gain :
14dB
Operating Temperature (Max) :
85°C
Pin Count :
6
Pbfree Code :
No
P1dB :
17dBm
JESD-609 Code :
e4
RoHS Status :
ROHS3 Compliant
Number of Pins :
6
Packaging :
Tape and Reel (TR)
Factory Lead Time :
8 Weeks
RF Type :
GENERAL PURPOSE
Package / Case :
6-VDFN Exposed Pad, CSP
Datasheets
HMC8411LP2FETR
Introducing RF Amplifiers Analog Devices, Inc. HMC8411LP2FETR from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Gain:14dB, Number of Pins:6, Package / Case:6-VDFN Exposed Pad, CSP, HMC8411LP2FETR pinout, HMC8411LP2FETR datasheet PDF, HMC8411LP2FETR amp .Beyond RF Amplifiers Analog Devices, Inc. HMC8411LP2FETR ,we also offer PGA-103+, ERA-3SM+, PGA-105+, Our vast inventory has you covered. Contact us now for immediate solutions.

Analog Devices, Inc. HMC8411LP2FETR


14dB General Purpose WIDE BAND LOW POWER Tape & Reel (TR) 10MHz~10GHz 2V~6V P1dB:17dBm 2dB Surface Mount

HMC8411LP2FETR Description


The HMC8411LP2FETR is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FETR provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typically enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.



HMC8411LP2FETR Features


Low noise figure: 1.7 dB typical

Single positive supply (self-biased)

High gain: 15.5 dB typical

High OIP3: 34 dBm typical

6-lead, 2 mm × 2 mm LFCSP

Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C)

Controlled manufacturing baseline 1 assembly/test site

1 fabrication site

Product change notification

Qualification data available on request



HMC8411LP2FETR Applications


Test instrumentation

Military communications


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