HIP6603BECBZ
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- Mfr.Part #
- HIP6603BECBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 41,874
- In Stock ：
- 41,874
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Max Output Current :
- 730mA
- High Side Voltage - Max (Bootstrap) :
- 15V
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Pin Count :
- 8
- Width :
- 3.9mm
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Output Peak Current Limit-Nom :
- 0.73A
- Number of Terminations :
- 8
- Input Type :
- Non-Inverting
- Logic Voltage - VIL, VIH :
- --
- Current - Peak Output (Source, Sink) :
- --
- Fall Time (Typ) :
- 20 ns
- Min Supply Voltage :
- 10.8V
- High Side Driver :
- yes
- Number of Pins :
- 8
- Rise Time :
- 50ns
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Terminal Position :
- Dual
- Current - Output :
- 730mA
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Number of Drivers :
- 2
- Mount :
- Surface Mount
- Supply Voltage :
- 12V
- Voltage - Rated DC :
- 12V
- Max Supply Voltage :
- 13.2V
- Channel Type :
- SYNCHRONOUS
- Min Operating Temperature :
- 0°C
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn) - annealed
- ECCN Code :
- EAR99
- Gate Type :
- N-Channel MOSFET
- Mounting Type :
- Surface Mount
- Base Part Number :
- HIP6603B
- JESD-609 Code :
- e3
- Max Operating Temperature :
- 85°C
- Temperature Grade :
- Other
- Lead Free :
- Lead Free
- Supplier Device Package :
- 8-SOIC-EP
- Packaging :
- Bulk
- Package / Case :
- SOIC
- Series :
- --
- Published :
- 2001
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Driven Configuration :
- Half-Bridge
- Datasheets
- HIP6603BECBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BECBZ Overview
The Intersil (Renesas Electronics Corporation) HIP6603BECBZ gate driver is designed for modern, high-efficiency applications, ensuring robust and reliable gate driving performance in a compact package. This half-bridge driver is optimized for driving N-channel MOSFETs and IGBTs, which makes it a pivotal component in advanced switching applications. Its integration features such as under-voltage lockout and high peak output drive current enhance system reliability and performance, particularly in demanding environments. The HIP6603BECBZ's small form factor in an 8SOIC package allows for reduced board space and improved thermal management, making it an ideal choice for scalable designs.
HIP6603BECBZ Features
The HIP6603BECBZ gate driver boasts a variety of features that enhance its efficiency and reliability:
- High peak output drive current, suitable for high-speed operation.
- Integrated under-voltage lockout for increased system safety.
- Matched propagation delay times for synchronous switching.
- Dual independent drives for flexible control configurations.
- Designed for operation with a wide range of supply voltages.
HIP6603BECBZ Applications
- DC-DC Converters: Facilitates efficient switching in power conversion circuits, optimizing performance and enhancing power density.
- Motor Control Systems: Drives MOSFETs or IGBTs in electric vehicle motor controllers, contributing to precise and efficient motor management.
- Solar Inverters: Plays a crucial role in managing power switches for converting DC from solar panels to AC, ensuring reliable and stable solar energy conversion.
- UPS Systems: Ensures high reliability and efficiency in uninterruptible power supplies, essential for critical power backup solutions.
- Welding Equipment: Supports robust and precise control in industrial welding machines, enhancing the quality and consistency of welds.
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