HIP6603BCBZ
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- Mfr.Part #
- HIP6603BCBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 2,298
- In Stock ：
- 2,298
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- JESD-609 Code :
- e3
- Input Type :
- Non-Inverting
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Gate Type :
- N-Channel MOSFET
- Package / Case :
- SOIC
- Min Supply Voltage :
- 10.8V
- Series :
- --
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Driven Configuration :
- Half-Bridge
- Fall Time (Typ) :
- 20 ns
- Max Output Current :
- 730mA
- Max Operating Temperature :
- 85°C
- Height Seated (Max) :
- 1.75mm
- Min Operating Temperature :
- 0°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Number of Drivers :
- 2
- Factory Lead Time :
- 7 Weeks
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Published :
- 2001
- Channel Type :
- SYNCHRONOUS
- Mount :
- Surface Mount
- Supplier Device Package :
- 8-SOIC
- Logic Voltage - VIL, VIH :
- --
- Lead Free :
- Lead Free
- Current - Peak Output (Source, Sink) :
- --
- Number of Functions :
- 1
- Width :
- 3.9mm
- Supply Voltage :
- 12V
- Terminal Form :
- Gull wing
- Current - Output :
- 730mA
- Base Part Number :
- HIP6603B
- Length :
- 4.9mm
- Max Supply Voltage :
- 13.2V
- Pin Count :
- 8
- Rise Time :
- 50ns
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- High Side Driver :
- yes
- Temperature Grade :
- Other
- High Side Voltage - Max (Bootstrap) :
- 15V
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 12V
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Output Peak Current Limit-Nom :
- 0.73A
- Datasheets
- HIP6603BCBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6603BCBZ Overview
The HIP6603BCBZ from Intersil (Renesas Electronics Corporation) is a highly efficient, robust gate driver designed for demanding half-bridge configurations. As a crucial component in advanced power management systems, this IC facilitates precise control over gate switching functionalities, optimizing performance across various applications. Its integration into systems aims to enhance efficiency, reliability, and the overall longevity of the power handling capabilities. The specialized design of the HIP6603BCBZ makes it an ideal choice for developers looking to harness the benefits of superior gate drive performance in a compact 8SOIC package.
HIP6603BCBZ Features
This gate driver IC comes equipped with numerous features that ensure optimal performance and ease of use in power management systems. It offers a robust voltage range and high drive strength, which enhances the IC's capability to handle high-speed switching with minimal delay and power loss. The built-in protection mechanisms against under-voltage and thermal overload further bolster the reliability and safety of applications, making the HIP6603BCBZ a dependable choice for critical systems.
HIP6603BCBZ Applications
- Motor Control Systems: The HIP6603BCBZ is utilized to drive the gates of MOSFETs and IGBTs in motor controllers, enabling efficient speed and torque management.
- Power Supplies: This IC optimizes switching transients in power supply units, reducing noise and improving power efficiency.
- Renewable Energy Systems: In solar inverters and wind turbine converters, the HIP6603BCBZ ensures reliable gate driving for effective energy conversion.
- Electric Vehicles: Applied in the drive systems of electric vehicles, it helps in managing power distribution efficiently to enhance vehicle performance and battery longevity.
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