HIP6601BECBZ
- Mfr.Part #
- HIP6601BECBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 3,542
- In Stock :
- 3,542
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Published :
- 2001
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Series :
- --
- Pin Count :
- 8
- Max Supply Voltage :
- 13.2V
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- HIP6601B
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Driven Configuration :
- Half-Bridge
- Max Operating Temperature :
- 85°C
- Output Peak Current Limit-Nom :
- 0.73A
- Current - Output :
- 730mA
- Package / Case :
- SOIC
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 20 ns
- Number of Functions :
- 1
- High Side Driver :
- yes
- Logic Voltage - VIL, VIH :
- --
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Supplier Device Package :
- 8-SOIC-EP
- Width :
- 3.9mm
- Supply Voltage :
- 12V
- Min Supply Voltage :
- 10.8V
- Mounting Type :
- Surface Mount
- Channel Type :
- SYNCHRONOUS
- Input Type :
- Non-Inverting
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Current - Peak Output (Source, Sink) :
- --
- Gate Type :
- N-Channel MOSFET
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Output Current :
- 730mA
- Rise Time :
- 50ns
- Temperature Grade :
- Other
- Number of Drivers :
- 2
- Number of Terminations :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Min Operating Temperature :
- 0°C
- Peak Reflow Temperature (Cel) :
- 260
- High Side Voltage - Max (Bootstrap) :
- 15V
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Datasheets
- HIP6601BECBZ

Gate Drivers - Intersil HIP6601BECBZ Overview
Intersil的HIP6601BECBZ是一款高性能的半桥驱动器,专为控制和驱动功率MOSFET而设计。该IC采用8引脚SOIC封装,确保紧凑且易于集成。作为一款高效、低功耗的驱动器,HIP6601BECBZ适用于各种高功率应用,提供可靠的输出控制和保护。它在高温和高电流环境下性能稳定,使其成为驱动电路和电源管理系统中的理想选择。凭借Intersil的专业技术,该驱动器在设计和制造上都达到最高标准,为客户提供一流的性能。作为一种流行的Gate Drivers产品,HIP6601BECBZ在许多行业和应用中被广泛使用。
HIP6601BECBZ Features
HIP6601BECBZ具有多种突出特点,包括:
- **半桥驱动**:能够驱动上下两个MOSFET,为复杂的电源应用提供灵活性。
- **宽电源电压范围**:支持4.5V至12.6V,适合多种电源应用。
- **保护功能**:包括过流保护和热关断,确保设备安全运行。
- **高效率**:降低整体功耗,延长电池寿命。
- **紧凑封装**:8引脚SOIC设计,易于集成到各种电路板中。
HIP6601BECBZ Applications
HIP6601BECBZ适用于多种应用,包括:
- **电源管理系统**:用于驱动MOSFET,实现高效的电源转换和管理。
- **马达驱动**:可以控制马达的运转,适用于工业和消费级设备。
- **DC-DC转换器**:用于驱动DC-DC转换器,实现电压调节和稳压功能。
- **电池充电器**:在电池充电器中控制电流流动,确保安全和高效充电。
- **太阳能逆变器**:可用于太阳能系统中的逆变器,优化能源转换效率。
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