HIP6601BECB
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- Mfr.Part #
- HIP6601BECB
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 30,218
- In Stock ：
- 30,218
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Pin Count :
- 8
- Number of Terminations :
- 8
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Supply Voltage :
- 12V
- Published :
- 2001
- RoHS Status :
- RoHS Compliant
- Series :
- --
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- High Side Voltage - Max (Bootstrap) :
- 15V
- Peak Reflow Temperature (Cel) :
- 240
- Gate Type :
- N-Channel MOSFET
- Temperature Grade :
- Other
- Terminal Position :
- Dual
- High Side Driver :
- yes
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Output Peak Current Limit-Nom :
- 0.73A
- JESD-609 Code :
- e0
- Qualification Status :
- Not Qualified
- Current - Output :
- 4.4mA
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Max Operating Temperature :
- 85°C
- Height Seated (Max) :
- 1.68mm
- Input Type :
- Non-Inverting
- Current - Peak Output (Source, Sink) :
- --
- Mount :
- Surface Mount
- Supplier Device Package :
- 8-SOIC-EP
- Supply Voltage-Min (Vsup) :
- 10.8V
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Packaging :
- Bulk
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Number of Functions :
- 1
- Lead Free :
- Contains Lead
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Base Part Number :
- HIP6601B
- Width :
- 3.9mm
- Number of Drivers :
- 2
- Channel Type :
- SYNCHRONOUS
- Min Operating Temperature :
- 0°C
- Number of Outputs :
- 2
- Supply Voltage1-Min :
- 5V
- Logic Voltage - VIL, VIH :
- --
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Length :
- 4.89mm
- JESD-30 Code :
- R-PDSO-G8
- Driven Configuration :
- Half-Bridge
- Datasheets
- HIP6601BECB
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BECB Overview
Optimize your power management solutions with the HIP6601BECB, a high-performance half-bridge gate driver from Intersil (Renesas Electronics Corporation). This advanced IC is specifically designed to drive both the high-side and low-side N-Channel MOSFETs in a synchronous converter, providing robust and efficient gate switching functionality. The HIP6601BECB is essential for applications requiring precise control and high durability. It integrates innovative features such as adaptive shoot-through protection to minimize cross-conduction and under-voltage lockout for enhanced operational safety, making it a trustworthy choice for critical power management tasks.
HIP6601BECB Features
The HIP6601BECB gate driver is engineered with leading-edge technology that ensures superior performance in demanding environments. Key features include:
- Integrated bootstrap diode for efficient driving of the high-side gate.
- Under-voltage lockout (UVLO) feature ensures safe operation under all electrical conditions.
- 3A peak output drive capability per channel for high driving power.
- Adaptive shoot-through protection to prevent MOSFET damage.
- Wide operating voltage range from 9V to 14V, accommodating various power systems.
- Fast propagation delays and rise/fall times for improved switching performance.
HIP6601BECB Applications
- DC/DC Converters: Used to drive MOSFETs in voltage step-up or step-down applications, providing stable and efficient power conversion.
- Motors: Essential in motor control circuits for driving MOSFETs that handle the motor’s high current requirements.
- Power Supplies: Critical for switching regulators in desktops and servers, ensuring efficient power distribution and heat management.
- Solar Inverters: Employs in solar power systems to efficiently manage power conversion from DC to AC, maximizing energy harnessing.
- Electric Vehicles: Utilized in electric vehicle power management systems to control power flow efficiently and safely.
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