HIP6601BCBZ
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- Mfr.Part #
- HIP6601BCBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 4,017
- In Stock ：
- 4,017
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Max Supply Voltage :
- 13.2V
- Current - Output :
- 730mA
- Fall Time (Typ) :
- 20 ns
- Factory Lead Time :
- 7 Weeks
- Input Type :
- Non-Inverting
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Temperature Grade :
- Other
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Max Operating Temperature :
- 85°C
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- High Side Voltage - Max (Bootstrap) :
- 15V
- Channel Type :
- SYNCHRONOUS
- Packaging :
- Bulk
- Height Seated (Max) :
- 1.75mm
- Driven Configuration :
- Half-Bridge
- Supplier Device Package :
- 8-SOIC
- Logic Voltage - VIL, VIH :
- --
- Number of Functions :
- 1
- Base Part Number :
- HIP6601B
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Number of Drivers :
- 2
- Lead Free :
- Lead Free
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Output Peak Current Limit-Nom :
- 0.73A
- Width :
- 3.9mm
- Supply Voltage :
- 12V
- Min Operating Temperature :
- 0°C
- Current - Peak Output (Source, Sink) :
- --
- Length :
- 4.9mm
- Qualification Status :
- Not Qualified
- Rise Time :
- 50ns
- JESD-30 Code :
- R-PDSO-G8
- JESD-609 Code :
- e3
- Max Output Current :
- 730mA
- Terminal Form :
- Gull wing
- High Side Driver :
- yes
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Pin Count :
- 8
- Gate Type :
- N-Channel MOSFET
- Series :
- --
- Mount :
- Surface Mount
- Package / Case :
- SOIC
- Min Supply Voltage :
- 10.8V
- Mounting Type :
- Surface Mount
- Datasheets
- HIP6601BCBZ
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BCBZ Overview
The Intersil (Renesas Electronics Corporation) HIP6601BCBZ gate driver is engineered to meet the high-performance demands of modern half-bridge circuit designs. Known for its reliability and efficiency, this component plays a crucial role in enhancing the operation of power MOSFETs and IGBTs by providing optimized gate drive voltage. The HIP6601BCBZ is especially suited for applications requiring precise control, rapid switching, and high power efficiency, making it an invaluable asset for B2B clients looking to scale up their product capabilities in various demanding environments.
HIP6601BCBZ Features
The HIP6601BCBZ gate driver offers several distinctive features. It integrates robust protective circuits, including under-voltage lockout, which ensures stable operation under fluctuating power conditions. Additionally, its advanced level-shifting technology facilitates high-side gate driving, which is critical for achieving efficient power conversion in half-bridge configurations. The device’s compact 8SOIC package is designed to minimize space on the PCB while maximizing performance, suitable for high-density installations.
HIP6601BCBZ Applications
- DC-DC Converters: This driver is crucial in managing efficient switching, improving performance and reducing electromagnetic interference in DC-DC converter systems.
- Motor Control Systems: Enhances the reliability and control of motor operations by providing precise gate drive signals, essential for variable speed and torque control in electric motors.
- Solar Inverters: In solar power systems, the HIP6601BCBZ ensures high efficiency and reliability in converting DC to AC power, optimizing solar energy utilization.
- Uninterruptible Power Supplies (UPS): Critical for maintaining stable operation, it enables reliable switching required for seamless power supply during outages.
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