HIP6601BCB
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- Mfr.Part #
- HIP6601BCB
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 35,867
- In Stock ：
- 35,867
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Packaging :
- Bulk
- JESD-30 Code :
- R-PDSO-G8
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 20 ns
- Base Part Number :
- HIP6601B
- Max Output Current :
- 730mA
- Pin Count :
- 8
- Max Supply Voltage :
- 13.2V
- JESD-609 Code :
- e3
- Gate Type :
- N-Channel MOSFET
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Driven Configuration :
- Half-Bridge
- Lead Free :
- Lead Free
- Output Peak Current Limit-Nom :
- 0.73A
- Input Type :
- Non-Inverting
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Width :
- 3.9mm
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Max Operating Temperature :
- 85°C
- Supplier Device Package :
- 8-SOIC
- Current - Output :
- 730mA
- Length :
- 4.9mm
- Number of Functions :
- 1
- Number of Drivers :
- 2
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Temperature Grade :
- Other
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 7 Weeks
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Package / Case :
- SOIC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Logic Voltage - VIL, VIH :
- --
- Height Seated (Max) :
- 1.75mm
- Min Supply Voltage :
- 10.8V
- Current - Peak Output (Source, Sink) :
- --
- Terminal Form :
- Gull wing
- Series :
- --
- High Side Voltage - Max (Bootstrap) :
- 15V
- RoHS Status :
- RoHS Compliant
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- High Side Driver :
- yes
- Supply Voltage :
- 12V
- Min Operating Temperature :
- 0°C
- Channel Type :
- SYNCHRONOUS
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Rise Time :
- 50ns
- Datasheets
- HIP6601BCB
Gate Drivers Intersil (Renesas Electronics Corporation) HIP6601BCB Overview
The HIP6601BCB, a highly efficient and robust gate driver from Intersil (Renesas Electronics Corporation), is designed to meet the rigorous demands of modern half-bridge circuits. This integrated circuit facilitates the high-speed switching of MOSFETs and IGBTs with minimal power loss, making it an indispensable component in power management technology. The HIP6601BCB enhances system reliability and performance by providing strong gate drive and rapid response times. Its compact 8SOIC package allows for streamlined integration into various applications, ensuring both space efficiency and ease of deployment. The use of the HIP6601BCB in your designs ensures enhanced operational efficiency and durability, crucial for high-performance power electronics systems.
HIP6601BCB Features
- Dual independent high and low side drivers
- Integrated bootstrap diode
- High peak output drive current: 2A source, 2A sink
- Wide supply voltage range: 9V to 14V
- Fast propagation delays and under-voltage lockout
- Input logic compatible with standard CMOS or LSTTL outputs
- Thermal shutdown feature for added protection
HIP6601BCB Applications
- DC/DC Converters: Enables efficient gate switching for voltage regulation in power supply modules.
- Motor Control: Drives MOSFETs in half-bridge configurations for precise motor speed and direction control.
- Power Tools: Provides reliable power management and enhanced performance in portable electric power tools.
- Solar Power Inverters: Facilitates the conversion of DC to AC power in solar installations, ensuring efficient energy transfer.
- Electric Vehicles: Supports the management of power distribution in electric vehicle powertrain systems.
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