HIP6601BCB
- Mfr.Part #
- HIP6601BCB
- Manufacturer
- Intersil
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- HALF BRIDGE BASED MOSFET DRIVER
- Stock
- 3,095
- In Stock :
- 3,095
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- Manufacturer :
- Intersil
- Product Category :
- Gate Drivers
- JESD-609 Code :
- e3
- Published :
- 2001
- Supplier Device Package :
- 8-SOIC
- Width :
- 3.9mm
- Channel Type :
- SYNCHRONOUS
- Rise Time :
- 50ns
- Output Peak Current Limit-Nom :
- 0.73A
- Min Operating Temperature :
- 0°C
- ECCN Code :
- EAR99
- Rise / Fall Time (Typ) :
- 20ns, 20ns
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Current - Peak Output (Source, Sink) :
- --
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 20 ns
- Number of Drivers :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Min Supply Voltage :
- 10.8V
- Length :
- 4.9mm
- Max Operating Temperature :
- 85°C
- Max Supply Voltage :
- 13.2V
- Gate Type :
- N-Channel MOSFET
- Factory Lead Time :
- 7 Weeks
- Pin Count :
- 8
- Series :
- --
- Base Part Number :
- HIP6601B
- Supply Voltage :
- 12V
- Height Seated (Max) :
- 1.75mm
- High Side Driver :
- yes
- Driven Configuration :
- Half-Bridge
- Number of Terminations :
- 8
- Temperature Grade :
- Other
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Voltage - Supply :
- 10.8 V ~ 13.2 V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Package / Case :
- SOIC
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Logic Voltage - VIL, VIH :
- --
- JESD-30 Code :
- R-PDSO-G8
- Qualification Status :
- Not Qualified
- Input Type :
- Non-Inverting
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Output Current :
- 730mA
- Number of Functions :
- 1
- Current - Output :
- 730mA
- High Side Voltage - Max (Bootstrap) :
- 15V
- Datasheets
- HIP6601BCB

Gate Drivers Intersil HIP6601BCB Overview
Introducing the Gate Drivers by Intersil, featuring the HIP6601BCB, a cutting-edge integrated circuit designed to meet the demanding requirements of modern electronic systems. This high-performance MOSFET driver leverages advanced technology to deliver efficient and reliable operation in half-bridge configurations.
With its robust design and precise control capabilities, the HIP6601BCB is the ideal solution for driving MOSFETs in various applications, ensuring optimal performance and durability in industrial, automotive, and power management systems.
HIP6601BCB Features
- Advanced half-bridge MOSFET driver
- High-performance and reliable operation
- Robust design for industrial applications
- Precise control for automotive systems
- Optimized for power management
HIP6601BCB Applications
- Industrial Automation: The HIP6601BCB provides efficient and precise control of MOSFETs in industrial automation systems, ensuring smooth operation and high reliability in manufacturing processes.
- Automotive Electronics: Leveraging its advanced features, the HIP6601BCB enhances the performance of MOSFETs in automotive electronic systems, contributing to improved efficiency and safety in vehicles.
- Power Management: In power management applications, the HIP6601BCB enables accurate control of MOSFETs, optimizing energy efficiency and ensuring stable power delivery in a variety of devices and equipment.
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