GBU803
- Mfr.Part #
- GBU803
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- 4-ESIP, GBU
- Datasheet
- Download
- Description
- DIODE BRIDGE 8A 200V GBU
- Stock
- 24,459
- In Stock :
- 24,459
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Diodes - Bridge Rectifiers
- RoHS :
- Compliant
- Weight :
- 4 g
- Terminal Finish :
- Pure Tin (Sn)
- Max Surge Current :
- 200 A
- Terminal Position :
- Single
- Series :
- -
- Package Shape :
- RECTANGULAR
- REACH SVHC :
- No SVHC
- Max Forward Surge Current (Ifsm) :
- 200 A
- Number of Elements :
- 4
- Length :
- 22.3 mm
- Flammability Rating :
- UL94 V-0
- Manufacturer Lifecycle Status :
- ACTIVE (Last Updated: 2 years ago)
- Number of Pins :
- 4
- HTS Code :
- 8541.10.00.80
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Max Junction Temperature (Tj) :
- 150 °C
- Breakdown Voltage-Min :
- 200 V
- Forward Voltage :
- 1.1 V
- Rep Pk Reverse Voltage-Max :
- 200 V
- Diode Type :
- BRIDGE RECTIFIER DIODE
- ECCN Code :
- EAR99
- Output Current-Max :
- 8 A
- Voltage :
- Vrrm - 200V
- Qualification Status :
- Not Qualified
- Diode Element Material :
- SILICON
- Voltage Rating (AC) :
- 140 V
- Number of Terminals :
- 4
- Additional Feature :
- UL RECOGNIZED
- Number of Phases :
- 1
- Capacitance :
- IR - 5uA
- Lifecycle Status :
- Production (Last Updated: 2 years ago)
- Technology :
- Standard
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 8 A
- Max Repetitive Reverse Voltage (Vrrm) :
- 200 V
- Package / Case :
- 4-ESIP, GBU
- Configuration :
- BRIDGE, 4 ELEMENTS
- Current - Reverse Leakage @ Vr :
- 5 µA @ 200 V
- Height :
- 18.8 mm
- Current - Average Rectified (Io) :
- 8 A
- Non-rep Pk Forward Current-Max :
- 200 A
- Packaging :
- GBU
- Supplier Device Package :
- GBU
- Width :
- 3.56 mm
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- JESD-30 Code :
- R-PSFM-T4
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- Package :
- Tube
- Forward Current :
- 8 A
- Terminal Form :
- THROUGH-HOLE
- Max Reverse Leakage Current :
- 5 µA
- Surface Mount :
- No
- Voltage - Peak Reverse (Max) :
- 200 V
- Max Operating Temperature :
- 150 °C
- Min Operating Temperature :
- -55 °C
- Datasheets
- GBU803

BRIDGE RECTIFIER DIODE Bridge Rectifier Standard Through Hole -55°C ~ 150°C (TJ) 5 µA @ 200 V 1.1 V @ 8 A 1-Phase 4-ESIP, GBU GBU
GBU803 Overview
The forward voltage of this device is 8 A.The component is available as a 4-ESIP, GBU package.Reverse leakage current should be monitored, and it shouldn't exceed 5 µA.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C ~ 150°C (TJ).A maximum voltage of 8 A can be supported by it.Ensure that surge current does not exceed 200 A.
GBU803 Features
8 A forward voltage
forward voltage of 8 A
4-ESIP, GBU package
operating at a temperature of -55°C ~ 150°C (TJ)
the maximum output voltage of 8 A
GBU803 Applications
There are a lot of Taiwan Semiconductor
GBU803 applications of bridge rectifiers.
- Low thermal resistance
- Extremely robust construction
- Fuse-in-glass diodes design
- Electrically isolated aluminum case
- Motor controls – Low Voltage and Medium Voltage converters
- SCR power bridges for solid state starters
- SCR and diode based input rectifiers
- Crowbar systems for motor drives
- Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
- Transportation – Traction rectifiers and auxiliary rectifiers
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