FZT458TA
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- Mfr.Part #
- FZT458TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-3
- Stock
- 37,788
- In Stock ：
- 37,788
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Base Part Number :
- FZT458
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Max Collector Current :
- 300mA
- Collector Emitter Saturation Voltage :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 3W
- Radiation Hardening :
- No
- Length :
- 6.7mm
- Current :
- 3A
- Weight :
- 7.994566mg
- Voltage - Rated DC :
- 400V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 50MHz
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transition Frequency :
- 50MHz
- Width :
- 3.7mm
- Current Rating :
- 300mA
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 300mA
- Published :
- 2006
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Max Breakdown Voltage :
- 400V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 400V
- Transistor Type :
- NPN
- Voltage :
- 400V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-30 Code :
- R-PDSO-G4
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FZT458TA
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT458TA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).50MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FZT458TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TA Applications
There are a lot of Diodes Incorporated
FZT458TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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