FPN660A

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Mfr.Part #
FPN660A
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 60V 3A TO226
Stock
11,565
In Stock :
11,565

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Qualification Status :
COMMERCIAL
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
Number of Elements :
1
Transistor Type :
PNP
Frequency - Transition :
75MHz
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
O-PBCY-T3
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Voltage - Collector Emitter Breakdown (Max) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 500mA 2V
Configuration :
Single
Pbfree Code :
yes
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
Not Applicable
Vce Saturation (Max) @ Ib, Ic :
400mV @ 200mA, 2A
Current - Collector (Ic) (Max) :
3A
Power - Max :
1W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Current - Collector Cutoff (Max) :
100nA ICBO
Pin Count :
3
Transition Frequency :
75MHz
Number of Terminations :
3
Package / Case :
TO-226-3, TO-92-3 Long Body
Terminal Position :
BOTTOM
JEDEC-95 Code :
TO-226AE
Polarity/Channel Type :
PNP
Terminal Finish :
MATTE TIN
Datasheets
FPN660A
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FPN660A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 Long Body, FPN660A pinout, FPN660A datasheet PDF, FPN660A amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor FPN660A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FPN660A


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

FPN660A Overview


In this device, the DC current gain is 250 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 200mA, 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

FPN660A Features


the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 400mV @ 200mA, 2A
a transition frequency of 75MHz


FPN660A Applications


There are a lot of Rochester Electronics, LLC
FPN660A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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