FMBS2383
- Mfr.Part #
- FMBS2383
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.8A SUPERSOT-6
- Stock
- 72,431
- In Stock :
- 72,431
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 160V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Width :
- 1.7mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 160V
- Max Collector Current :
- 800mA
- Published :
- 2011
- Max Power Dissipation :
- 630mW
- Number of Pins :
- 6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- FMBS2383
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Max Breakdown Voltage :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 100mA 5V
- Height :
- 1mm
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Surface Mount
- Power Dissipation :
- 630mW
- Length :
- 3mm
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Weight :
- 36mg
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- hFE Min :
- 80
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 120MHz
- Transition Frequency :
- 120MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 160V
- Lifecycle Status :
- LIFETIME (Last Updated: 6 days ago)
- Datasheets
- FMBS2383

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBS2383 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 120MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 800mA volts.
FMBS2383 Features
the DC current gain for this device is 80 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
FMBS2383 Applications
There are a lot of ON Semiconductor
FMBS2383 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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