FJI5603DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Number of Terminations :

3

Packaging :

Tube

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

1.6kV

Mounting Type :

Through Hole

Weight :

2.084g

Transition Frequency :

5MHz

Collector Emitter Voltage (VCEO) :

800V

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 200mA, 1A

Current - Collector Cutoff (Max) :

100μA

Published :

2014

Factory Lead Time :

16 Weeks

Gain Bandwidth Product :

5MHz

Collector Emitter Breakdown Voltage :

800V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Max Collector Current :

3A

Mount :

Through Hole

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Frequency :

5MHz

Radiation Hardening :

No

hFE Min :

20

ECCN Code :

EAR99

Max Power Dissipation :

100W

Power Dissipation :

100W

Emitter Base Voltage (VEBO) :

12V

RoHS Status :

ROHS3 Compliant