FJE3303H2TU
- Mfr.Part #
- FJE3303H2TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- FJE3303
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 4MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 4MHz
- Power Dissipation :
- 20W
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 9V
- Continuous Drain Current (ID) :
- 1.5A
- Frequency :
- 4MHz
- Length :
- 8mm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 8
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 400V
- Drain to Source Breakdown Voltage :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Transistor Type :
- NPN
- Width :
- 3.25mm
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- yes
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 3V
- Max Collector Current :
- 1.5A
- Number of Terminations :
- 3
- Height :
- 11mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Weight :
- 761mg
- Max Power Dissipation :
- 20W
- ECCN Code :
- EAR99
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Current Rating :
- 1.5A
- Mount :
- Through Hole
- Voltage - Rated DC :
- 400V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Base Voltage (VCBO) :
- 700V
- Lead Free :
- Lead Free
- Datasheets
- FJE3303H2TU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H2TU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H2TU Applications
There are a lot of ON Semiconductor
FJE3303H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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